An XPS study of zinc oxide thin film growth on copper using zinc acetate as a precursor
1993; Elsevier BV; Volume: 223; Issue: 2 Linguagem: Inglês
10.1016/0040-6090(93)90542-w
ISSN1879-2731
AutoresLeong Mar, P. Y. Timbrell, Robert N. Lamb,
Tópico(s)Ga2O3 and related materials
ResumoUltrathin zinc oxide (ZnO) films (10–200 Å thickness range) were grown on polycrystalline copper substrates via the sublimation of anhydrous zinc acetate (Zn(CH3COO)2) in high vacuum (5 × 10−7mbar). The thermal decomposition of basic zinc acetate precursor films, deposited on room temperature substrates, to ZnO were examined using X-ray photoelectron spectroscopy (XPS). The transformation to ZnO was monitored as a function of post-deposition sample heating, up to temperatures of 350 °C. ZnO films were grown on copper substrates heated to 400 °C and analysed using angle-dependent XPS and depth profiling. These films were found to contain less than 4% atomic carbon in the bulk and there was no direct evidence for island-type growth.
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