Epitaxial growth of NdF3:Er3+ film on CaF2(111) substrate by molecular beam epitaxy
1998; Elsevier BV; Volume: 192; Issue: 1-2 Linguagem: Inglês
10.1016/s0022-0248(98)00430-8
ISSN1873-5002
AutoresJung Min Ko, Yasuko Terada, H. J. Ko, Kiyoshi Shimamura, T. Yao, T. Fukuda,
Tópico(s)Ga2O3 and related materials
ResumoEr3+ doped NdF3 single crystalline thin films with smooth, microcrack-free, and high-crystalline quality were grown on CaF2(1 1 1) substrate at 500°C by molecular beam epitaxy (MBE). The relationship between subcell and supercell showing the reconstructed 31/2×31/2 structure was studied by reflection high-energy electron diffraction (RHEED) investigation. The film surface and the growth mode were examined in situ by RHEED patterns and atomic force microscope (AFM) images ex situ. The crystallinity of the film and the lattice mismatch between NdF3 : Er3+(0 0 0 2) film and CaF2(1 1 1) substrate depending on the Er3+ concentration were investigated by X-ray rocking curve analysis.
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