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Epitaxial Graphene Transistors on SiC Substrates

2008; Institute of Electrical and Electronics Engineers; Volume: 55; Issue: 8 Linguagem: Inglês

10.1109/ted.2008.926593

1557-9646

J. Kedzierski, Pei-Lan Hsu, Paul Healey, P.W. Wyatt, C.L. Keast, Mike Sprinkle, Claire Berger, Walt A. de Heer,

Boron and Carbon Nanomaterials Research

This paper describes the behavior of top-gated transistors fabricated using carbon, specifically epitaxial graphene on SiC, as the active material. Although graphene devices have been built before, in this paper, we provide the first demonstration and systematic evaluation of arrays of a large number of transistors produced using standard microelectronics methods. The graphene devices presented feature high-k dielectric, mobilities up to 5000 cm 2 /Vldr s, and I on /I off ratios of up to seven, and are methodically analyzed to provide insight into the substrate properties. Typical of graphene, these micrometer-scale devices have negligible band gaps and, therefore, large leakage currents.