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Metamorphic In/sub 0.4/Al/sub 0.6/As/In/sub 0.4/Ga/sub 0.6/As HEMTs on GaAs substrate

1999; Institute of Electrical and Electronics Engineers; Volume: 20; Issue: 3 Linguagem: Inglês

10.1109/55.748908

1558-0563

S. Bollaert, Y. Cordier, Virginie Hoel, M. Zaknoune, H. Happy, Sylvie Lépilliet, A. Cappy,

GaN-based semiconductor devices and materials

New In/sub 0.4/Al/sub 0.6/As/In/sub 0.4/Ga/sub 0.6/As metamorphic (MM) high electron mobility transistors (HEMTs) have been successfully fabricated on GaAs substrate with T-shaped gate lengths varying from 0.1 to 0.25 μm. The Schottky characteristics are a forward turn-on voltage of 0.7 V and a gate breakdown voltage of -10.5 V. These new MM-HEMTs exhibit typical drain currents of 600 mA/mm and extrinsic transconductance superior to 720 mS/mm. An extrinsic current cutoff frequency f T of 195 GHz is achieved with the 0.1-μm gate length device. These results are the first reported for In/sub 0.4/Al/sub 0.6/As/In/sub 0.4/Ga/sub 0.6/As MM-HEMTs on GaAs substrate.