Technological compensation circuit for accurate temperature sensor
1998; Elsevier BV; Volume: 69; Issue: 2 Linguagem: Inglês
10.1016/s0924-4247(98)00081-8
ISSN1873-3069
AutoresR. Amador, Alicia Polanco, Hugo Hernández, Ernesto Pérez, Agnes Nagy,
Tópico(s)Advanced Sensor Technologies Research
ResumoA compensation circuit has been developed to reduce the VBE wafer spread of a bipolar transistor by taking advantage of the correlation between pinched base resistor RP and IS of the Ebers-Moll model. This compensation circuit was used in the design of a Celsius temperature sensor with intrinsic reference, improving its accuracy at least five times within the 0 °C to 100 °C interval. Accuracy has been calculated considering wafer level statistical modeling of bipolar IC parameters, circuit sensitivity, and worst case circuit simulation. This technological compensation procedure allows to obtain an accurate IC temperature sensor without final trimming at wafer level.
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