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32/spl times/32 ultraviolet Al/sub 0.1/Ga/sub 0.9/N/GaN p-i-n photodetector array

2000; IEEE Photonics Society; Volume: 36; Issue: 11 Linguagem: Inglês

10.1109/3.890260

1558-1713

Bo Yang, K. Heng, T. Li, C.J. Collins, S. Wang, Russell D. Dupuis, Joe C. Campbell, M. Schurman, Ian T. Ferguson,

Photocathodes and Microchannel Plates

We report the fabrication and performance of a 32/spl times/32 Al/sub 0.1/Ga/sub 0.9/N-GaN ultraviolet p-i-n photodetector array. The devices exhibit very low dark current, the mean dark current density is /spl sim/4 nA/cm/sup 2/ at 5-V reverse bias, and the dark current distribution is very uniform (/spl sim/98% of the devices exhibit dark current density <90 nA/cm/sup 2/). Owing to the design of the p-Al/sub 0.13/Ga/sub 0.87/N window layer, the external quantum efficiency is as high as 72% at 357 nm. The photocurrent distribution is also presented. The detectivity is estimated to be as high as 8/spl times/10/sup 14/ cm/spl middot/Hz/sup 1/2//spl middot/W/sup -1/.