Influence of Cu(In,Ga)Se2 band gap on the valence band offset with CdS
2004; Elsevier BV; Volume: 451-452; Linguagem: Inglês
10.1016/j.tsf.2003.10.122
ISSN1879-2731
AutoresT. Schulmeyer, Robert Kniese, Ralf Hunger, Wolfram Jaegermann, Michael Powalla, Andreas Klein,
Tópico(s)Semiconductor materials and interfaces
ResumoThe absorber/buffer interface is essential for high-performance thin film chalcopyrite solar cells. In this contribution we present studies of interface formation between Cu(In,Ga)Se2 with 30 and 100% Ga content and the II–VI semiconductor CdS using in situ photoelectron spectroscopy. Clean Cu(In,Ga)Se2 surfaces with a Cu-deficient surface composition were prepared by heating-off of Se layers, which were deposited onto the absorber layers in the deposition chamber directly after absorber deposition. Interfaces with CdS were prepared by stepwise evaporation. The determined band alignments are compared to theoretical calculations.
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