Portal de Periódicos da CAPES

Electronic structure of anomalous muonium in GaP and GaAs

1993; American Physical Society; Volume: 47; Issue: 16 Linguagem: Inglês

10.1103/physrevb.47.10193

1095-3795

J. W. Schneider, K. H. Chow, R. F. Kiefl, S. R. Kreitzman, W. A. MacFarlane, R. C. DuVarney, T. L. Estle, R. L. Lichti, C. Schwab,

Advancements in Battery Materials

The nuclear hyperfine structure of anomalous muonium in GaP has been resolved using muon level-crossing resonance. We find that 43% of the unpaired electron spin density resides on the nearest-neighbor Ga and 35% on the nearest-neighbor P on the 〈111〉 axis of symmetry. The s and p character of the unpaired spin density indicates that the Ga and P are displaced 0.23 and 0.54 \AA{} away from the bond center. The now complete set of measured muon and nearest-neighbor nuclear hyperfine parameters for anomalous muonium in GaP and GaAs allows a detailed comparison of the two compounds, showing that the distribution of spin density among the group-III and group-V nearest neighbors in GaP is almost exactly the opposite of that in GaAs. This is contrary to what one would expect from a simple model of anomalous muonium in compound semiconductors involving an account of bonding characteristics.