Vertical AlGaN deep ultraviolet light emitting diode emitting at 322nm fabricated by the laser lift-off technique
2006; American Institute of Physics; Volume: 89; Issue: 26 Linguagem: Inglês
10.1063/1.2424668
ISSN1520-8842
AutoresKoji Kawasaki, Choshiro Koike, Yoshinobu Aoyagi, Misaichi Takeuchi,
Tópico(s)ZnO doping and properties
ResumoA vertical AlGaN deep ultraviolet (DUV) light emitting diode (LED) emitting at 322nm was fabfricated by the laser lift-off technique. The emission area extended to the entire electrode uniformly, and the current crowding was suppressed effectively in the devices. As a result, the differential conductance of the vertical LED was improved by a factor of 5 and the operation voltage was reduced to half, compared to that of the lateral LED. The self-heating effect was effectively suppressed even at high-current-density operation. The vertical structure in the high resistive AlGaN LED has potential application in high-power AlGaN DUV devices.
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