Below band-gap electroabsorption in bulk semi-insulating GaAs
1993; American Institute of Physics; Volume: 63; Issue: 5 Linguagem: Inglês
10.1063/1.109973
ISSN1520-8842
AutoresJeff C. Adams, C. David Capps, R. Aaron Falk, S.G. Ferrier,
Tópico(s)Semiconductor materials and devices
ResumoElectroabsorption measurements of bulk semi-insulating GaAs using a pulsed applied voltage are presented for the wavelength range 890–920 nm and compared with results of the same measurement using a dc applied voltage. In the latter case, field inhomogeneities in the GaAs gives a spatially dependent absorption which thwarts extraction of the absorption coefficient versus electric field. We circumvent this problem by transiently measuring the absorption during a pulsed bias voltage when the field in the sample is nearly uniform.
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