Lattice dynamics and Raman spectra of strained hexagonal GaN/AlN and GaN/AlGaN superlattices
2003; Wiley; Issue: 7 Linguagem: Inglês
10.1002/pssc.200303311
ISSN1862-6351
AutoresV. Yu. Davydov, A. N. Smirnov, M. B. Smirnov, С. В. Карпов, I. N. Goncharuk, R. N. Kyutt, М. В. Байдакова, A. V. Sakharov, E. E. Zavarin, W. V. Lundin, Hisatomo Harima, Kenji Kisoda,
Tópico(s)ZnO doping and properties
Resumophysica status solidi (c)Volume 0, Issue 7 p. 2035-2038 Original Paper Lattice dynamics and Raman spectra of strained hexagonal GaN/AlN and GaN/AlGaN superlattices V. Yu. Davydov, Corresponding Author V. Yu. Davydov valery.davydov@mail.ioffe.ru Ioffe Physico-Technical Institute, 194021 St. Petersburg, RussiaPhone: +7 812 247 99 11, Fax: +7 812 247 10 17Search for more papers by this authorA. N. Smirnov, A. N. Smirnov Ioffe Physico-Technical Institute, 194021 St. Petersburg, RussiaSearch for more papers by this authorM. B. Smirnov, M. B. Smirnov Fock Institute of Physics, St. Petersburg State University, 198504 St. Petersburg, RussiaSearch for more papers by this authorS. V. Karpov, S. V. Karpov Fock Institute of Physics, St. Petersburg State University, 198504 St. Petersburg, RussiaSearch for more papers by this authorI. N. Goncharuk, I. N. Goncharuk Ioffe Physico-Technical Institute, 194021 St. Petersburg, RussiaSearch for more papers by this authorR. N. Kyutt, R. N. Kyutt Ioffe Physico-Technical Institute, 194021 St. Petersburg, RussiaSearch for more papers by this authorM. V. Baidakova, M. V. Baidakova Ioffe Physico-Technical Institute, 194021 St. Petersburg, RussiaSearch for more papers by this authorA.V. Sakharov, A.V. Sakharov Ioffe Physico-Technical Institute, 194021 St. Petersburg, RussiaSearch for more papers by this authorE. E. Zavarin, E. E. Zavarin Ioffe Physico-Technical Institute, 194021 St. Petersburg, RussiaSearch for more papers by this authorW. V. Lundin, W. V. Lundin Ioffe Physico-Technical Institute, 194021 St. Petersburg, RussiaSearch for more papers by this authorH. Harima, H. Harima Department of Electronics and Information Science, Kyoto Institute of Technology, Matsugasaki, Sakyo-ku, Kyoto 606-8585, JapanSearch for more papers by this authorK. Kisoda, K. Kisoda Department of Physics, Faculty of Education, Wakayama University, 930 Sakaedani, Wakayama 640-8510, JapanSearch for more papers by this author V. Yu. Davydov, Corresponding Author V. Yu. Davydov valery.davydov@mail.ioffe.ru Ioffe Physico-Technical Institute, 194021 St. Petersburg, RussiaPhone: +7 812 247 99 11, Fax: +7 812 247 10 17Search for more papers by this authorA. N. Smirnov, A. N. Smirnov Ioffe Physico-Technical Institute, 194021 St. Petersburg, RussiaSearch for more papers by this authorM. B. Smirnov, M. B. Smirnov Fock Institute of Physics, St. Petersburg State University, 198504 St. Petersburg, RussiaSearch for more papers by this authorS. V. Karpov, S. V. Karpov Fock Institute of Physics, St. Petersburg State University, 198504 St. Petersburg, RussiaSearch for more papers by this authorI. N. Goncharuk, I. N. Goncharuk Ioffe Physico-Technical Institute, 194021 St. Petersburg, RussiaSearch for more papers by this authorR. N. Kyutt, R. N. Kyutt Ioffe Physico-Technical Institute, 194021 St. Petersburg, RussiaSearch for more papers by this authorM. V. Baidakova, M. V. Baidakova Ioffe Physico-Technical Institute, 194021 St. Petersburg, RussiaSearch for more papers by this authorA.V. Sakharov, A.V. Sakharov Ioffe Physico-Technical Institute, 194021 St. Petersburg, RussiaSearch for more papers by this authorE. E. Zavarin, E. E. Zavarin Ioffe Physico-Technical Institute, 194021 St. Petersburg, RussiaSearch for more papers by this authorW. V. Lundin, W. V. Lundin Ioffe Physico-Technical Institute, 194021 St. Petersburg, RussiaSearch for more papers by this authorH. Harima, H. Harima Department of Electronics and Information Science, Kyoto Institute of Technology, Matsugasaki, Sakyo-ku, Kyoto 606-8585, JapanSearch for more papers by this authorK. Kisoda, K. Kisoda Department of Physics, Faculty of Education, Wakayama University, 930 Sakaedani, Wakayama 640-8510, JapanSearch for more papers by this author First published: 24 November 2003 https://doi.org/10.1002/pssc.200303311Citations: 12AboutPDF ToolsRequest permissionExport citationAdd to favoritesTrack citation ShareShare Give accessShare full text accessShare full-text accessPlease review our Terms and Conditions of Use and check box below to share full-text version of article.I have read and accept the Wiley Online Library Terms and Conditions of UseShareable LinkUse the link below to share a full-text version of this article with your friends and colleagues. Learn more.Copy URL Share a linkShare onFacebookTwitterLinked InRedditWechat Abstract We suggest on approach including lattice dynamics calculations and Raman measurements of individual phonon modes in hexagonal GaN/AlN and GaN/AlGaN superlattices, which can prove to be a valuable tool in quantitative characterization of these nanostructures. (© 2003 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim) Citing Literature Volume0, Issue7Special Issue: 5th International Conference on Nitride Semiconductors (ICNS-5)December 2003Pages 2035-2038 RelatedInformation
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