Optical properties and frequency conversion with AgGaGeS 4 crystal

2004; IOP Publishing; Volume: 13; Issue: 9 Linguagem: Inglês

10.1088/1009-1963/13/9/019

ISSN

1741-4199

Autores

Deming Ren, Jinzhe Huang, Yanchen Qu, HU Xiao-yong, Yu. М. Andreev, Geiko Pavel, Valeriy Badikov, Shaiduko Anna,

Tópico(s)

Chalcogenide Semiconductor Thin Films

Resumo

The basic optical property and phase-matching of new mixed AgGaGeS4 crystal are presented. Frequency conversion, in particular the SHG of 30ns pulses of 9μm emission band of transversely excited atmospheric-pressure (TEA) CO2 laser, is realized in AgGaGeS4 for the first time. As high as 0.57% peak power and 0.3% external energy efficiencies and 0.7mJ harmonic pulse energy are obtained for the 9.55 μm emission line at pump intensity of 4% level of the damage threshold.

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