Growth of GaN Layers by One-, Two-, and Three-Flow Metalorganic Vapor Phase Epitaxy
2001; Wiley; Volume: 188; Issue: 2 Linguagem: Inglês
10.1002/1521-396x(200112)188
ISSN1521-396X
AutoresKazuhiro Ohkawa, Akira Hirako, M. Yoshitani,
Tópico(s)Ga2O3 and related materials
ResumoOne-, two- and three-flow metalorganic vapor phase epitaxy (MOVPE) methods have been compared in GaN growth, and each growth is analyzed by computational fluid dynamics (CFD). It is found that two-flow method shows better growth condition for achieving high quality layers compared to one- and three-flow methods. A GaN layer with high Hall mobility of 360 cm2/Vs is obtained by two-flow MOVPE growth despite no low-temperature buffer layer. The V/III decomposition ratio of NH2/GaCH3 is calculated by CFD simulation in gas phase just on substrate surface. The V/III ratio is in a narrow region to get high-mobility samples.
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