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Low temperature deposited graphene by surface wave plasma CVD as effective oxidation resistive barrier

2013; Elsevier BV; Volume: 78; Linguagem: Inglês

10.1016/j.corsci.2013.09.013

1879-0496

Golap Kalita, Muhammed Emre Ayhan, Subash Sharma, Sachin M. Shinde, Dilip Chandra Ghimire, Koichi Wakita, Masayoshi Umeno, Masaki Tanemura,

Semiconductor materials and devices

An effective approach for preserving the metal surface from oxidation and corrosion is of a great importance for various practical and industrial applications. Here, we demonstrate that graphene coating by surface wave plasma (SWP) chemical vapor deposition (CVD) technique at low temperature (∼450 °C) is promising as an oxidation resistive barrier of Cu foil. A strong oxidation resistance performance is obtained for the Cu foil heated in atmospheric conditions with robust surface passivation by the deposited graphene film. The developed process can be exploited for various types of metals as graphene growth is independent of catalytic ability of the metal surface and scalable by a roll-to-roll deposition process.