Chemistry of fluorine in the oxidation of silicon
1991; American Institute of Physics; Volume: 58; Issue: 25 Linguagem: Inglês
10.1063/1.104686
ISSN1520-8842
AutoresS. R. Kasi, M. Liehr, S. Cohen,
Tópico(s)Semiconductor materials and devices
ResumoThe chemical environment of fluorine in the oxide layer of metal-oxide-semiconductor (MOS) structures has been examined by surface analytical spectroscopies. HF treatment of Si(100) results in subsurface SiF formation. Upon oxidation, oxyfluoride moieties are formed with a significant accumulation of fluorine throughout the oxide layer. These changes are correlated to the electrical integrity of MOS interfaces by performing Fowler–Nordheim electron injection studies.
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