Portal de Periódicos da CAPES

Thermal Conductivity of Amorphous Indium–Gallium–Zinc Oxide Thin Films

2013; Institute of Physics; Volume: 6; Issue: 2 Linguagem: Inglês

10.7567/apex.6.021101

1882-0786

Toru Yoshikawa, Takashi Yagi, Nobuto Oka, Junjun Jia, Yuichiro Yamashita, Koichiro Hattori, Yutaka Seino, Naoyuki Taketoshi, Tetsuya Baba, Yuzo Shigesato,

ZnO doping and properties

We investigated the thermal conductivity of 200-nm-thick amorphous indium–gallium–zinc-oxide (a-IGZO) films. Films with a chemical composition of In:Ga:Zn= 1:1:0.6 were prepared by dc magnetron sputtering using an IGZO ceramic target and an Ar–O2 sputtering gas. The carrier density of the films was systematically controlled from 1014 to >1019 cm-3 by varying the O2 flow ratio. Their Hall mobility was slightly higher than 10 cm2·V-1·s-1. Those films were sandwiched between 100-nm-thick Mo layers; their thermal diffusivity, measured by a pulsed light heating thermoreflectance technique, was ∼5.4×10-7 m2·s-1 and was almost independent of the carrier density. The average thermal conductivity was 1.4 W·m-1·K-1.