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Growth of very low temperature polysilicon film by remote plasma-enhanced chemical-vapor deposition

1997; American Institute of Physics; Volume: 15; Issue: 4 Linguagem: Inglês

10.1116/1.580797

1520-8559

Jin-Ho Oh, Chong-Yun Park, Nam‐Ihn Cho, Hyoung Gin Nam,

Silicon Nanostructures and Photoluminescence

Silicon thin films have been prepared on SiO2 substrates by remote plasma-enhanced chemical-vapor deposition using H2/SiH4/Ar gases. The film properties were found to critically depend on the variations of deposition parameters, which include the SiH4 flow rate with a fixed H2 flow rate, Ar flow rate, and radio frequency (rf) power. The substrate temperature was fixed at 280±5 °C. The best quality polysilicon film was obtained when the rfpower/Ar ratio was set near 0.5±0.05. In addition, the electrical mobility was observed to increase with the increasing SiH4 flow rate. The effects of the deposition parameters variation were discussed to properly account for the observed properties of the thin films studied.