Possible applications of tantalum silicide for very-large-scale integration technology
1986; Elsevier BV; Volume: 140; Issue: 1 Linguagem: Inglês
10.1016/0040-6090(86)90167-7
ISSN1879-2731
Autores Tópico(s)Copper Interconnects and Reliability
ResumoThe possibility of depositing TaSi2 by sputtering and chemical vapour deposition (selective and non-selective deposition) opens a wide variety of applications for this material in very-large-scale integration technology. The following examples are briefly discussed: (1) polycide gate metallization; (2) silicide gate metallization; (3) diffusion barrier properties; (4) source-drain silicidation; (5) planarization by contact hole filling.
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