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Metal-Insulator Transition Tuned by External Gates in Hall Systems with Constrictions

2006; American Physical Society; Volume: 97; Issue: 4 Linguagem: Inglês

10.1103/physrevlett.97.046801

1092-0145

Emiliano Papa, Tilo Stroh,

Advancements in Semiconductor Devices and Circuit Design

The nature of a metal-insulator transition tuned by external gates in quantum Hall (QH) systems with point constrictions, as reported in recent experiments of Roddaro et al [1], is examined. We attribute this phenomenon to a splitting of the integer edge into conducting and insulating stripes, the latter wide enough to allow for the stability of the edge structure. Inter-channel impurity scattering and inter-channel Coulomb interactions do not destabilize this picture.