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Nonlithographic nanowire-array tunnel device: Fabrication, zero-bias anomalies, and Coulomb blockade

1998; American Physical Society; Volume: 57; Issue: 21 Linguagem: Inglês

10.1103/physrevb.57.13550

1095-3795

D. N. Davydov, J. Haruyama, Dmitri Routkevitch, B. W. Statt, D.S. Ellis, Martin Moskovits, J. M. Xu,

Advancements in Semiconductor Devices and Circuit Design

Coulomb blockade (CB) was observed in Al/aluminum oxide/Ni nanowire single-junction arrays fabricated by electrochemical deposition of Ni into porous aluminum oxide nanotemplates. The bias dependence of the tunneling current and the temperature dependence of the zero-bias anomalies observed in the tunneling spectra are shown to accord well with the theory of Nazarov for CB in systems where the leads play a significant role. Direct scanning tunneling microscopy measurements of the nanowire leads resistance confirms it to be the regime required by the theory.