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Dependence of crystal orientation in Al-induced crystallized poly-Si layers on SiO2 insertion layer thickness

2012; Elsevier BV; Volume: 356; Linguagem: Inglês

10.1016/j.jcrysgro.2012.07.015

1873-5002

Atsushi Okada, Kaoru Toko, Kosuke O. Hara, Noritaka Usami, Takashi Suemasu,

Semiconductor materials and interfaces

We have fabricated poly-Si thin films on fused silica substrates by the Al-induced crystallization (AIC) method with SiO2 insertion layers of various thicknesses (0–20 nm). The growth morphologies of poly-Si layers were dramatically changed by the SiO2 thickness, i.e., thin layers (2 nm) provided high growth rates and (100) orientations, and thick layers (10 nm) provided low growth rates and (111) orientations. These results showed that the crystal orientation of AIC-Si significantly depends on the diffusion rate of Si atoms into the Al layer.