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Temperature dependent light induced changes and annealing of the changes in hydrogen amorphous silicon

1983; Elsevier BV; Volume: 59-60; Linguagem: Inglês

10.1016/0022-3093(83)90612-9

1873-4812

Jin Jang, Tae Man Kim, Jaekyung Hyun, Jong Hwan Yoon, Choochon Lee,

CCD and CMOS Imaging Sensors

Temperature dependent light induced dark- and photoconductivity changes and annealing of the changes have been investigated. The dark- and photoconductivity changes are accelerated as the temperature during the illumination is elevated. The activation energies of thermal relaxation time for undoped and phosphorus doped a-Si:H films showing conductivity decrease after illumination are the range 1.32–1.53 eV, those for the films showing conductivity increase 0.79–1.00 eV. The activation energy is decreased as the concentration of phosphorus (or boron) is increased. The possible interpretation of the results is suggested.