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Study of GaN light-emitting diodes fabricated by laser lift-off technique

2004; American Institute of Physics; Volume: 95; Issue: 8 Linguagem: Inglês

10.1063/1.1651338

1520-8850

Chen-Fu Chu, Fang-I Lai, Jung-Tang Chu, Chang-Chin Yu, Chia-Feng Lin, Hao‐Chung Kuo, S. C. Wang,

Semiconductor Quantum Structures and Devices

The fabrication process and performance characteristics of the laser lift-off (LLO) GaN light-emitting diodes (LEDs) were investigated. The LLO-GaN LEDs were fabricated by lifting off the GaN LED wafer structure grown on the original sapphire substrate by a KrF excimer laser at 248 nm wavelength with the laser fluence of 0.6 J/cm2 and transferring it onto a Cu substrate. The LLO-GaN LEDs on Cu show a nearly four-fold increase in the light output power over the regular LLO-LEDs on the sapphire substrate. High operation current up to 400 mA for the LLO-LEDs on Cu was also demonstrated. Based on the emission wavelength shift with the operating current data, the LLO-LEDs on Cu show an estimated improvement of heat dissipation capacities by nearly four times over the light-emitting devices on sapphire substrate. The LLO process should be applicable to other GaN-based LEDs in particular for those high light output power and high operation current devices.