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Measurement of Interface-Induced Optical Anisotropies of a Semiconductor Heterostructure: ZnSe / GaAs(100)

1996; American Physical Society; Volume: 77; Issue: 2 Linguagem: Inglês

10.1103/physrevlett.77.326

1092-0145

Tetsuji Yasuda, Kenji Kimura, Shinji Miwa, L. H. Kuo, Chengguo Jin, Kazunobu Tanaka, Tao Yao,

Chalcogenide Semiconductor Thin Films

We have developed a simple procedure that enables in situ simultaneous measurement of the surface and interface anisotropies in semiconductor heterostructures. Optical anisotropies in ZnSe $/$GaAs(100) heterostructures grown by molecular beam epitaxy were measured in situ by reflectance difference spectroscopy (RDS). We show that a Se treatment of the clean GaAs surface forms an optically anisotropic subsurface layer that remains intact even after ZnSe overgrowth, while a Zn treatment results in a quite different interface RD response. The RD spectra of the Se- and Zn-terminated ZnSe surfaces are briefly discussed.