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GaN MOS-HEMT Using Ultra-Thin Al 2 O 3 Dielectric Grown by Atomic Layer Deposition

2007; Institute of Physics; Volume: 24; Issue: 8 Linguagem: Inglês

10.1088/0256-307x/24/8/072

1741-3540

Yue Yuanzheng, Yue Hao, Qian Feng, Jincheng Zhang, Xiaohua Ma, Jinyu Ni,

Ga2O3 and related materials

We report a GaN metal-oxide-semiconductor high electron mobility transistor (MOS-HEMT) with atomic layer deposited (ALD) Al2O3 gate dielectric. Based on the previous work [Appl. Phys. Lett. 86 (2005) 063501] of Ye et al. by decreasing the thickness of the gate oxide to 3.5 nm and optimizing the device fabrication process, the device with maximum transconductance of 150 mS/mm is produced and discussed in comparison with the result of 100 mS/mm of Ye et al. The corresponding drain current density in the 0.8-μm-gate-length MOS-HEMT is 800 mA/mm at the gate bias of 3.0 V. The gate leakage is two orders of magnitude lower than that of the conventional AlGaN/GaN HEMT. The excellent characteristics of this novel MOS-HEMT device structure with ALD Al2O3 gate dielectric are presented.