Intrinsic optical damage in KBr at 532 nm
1987; American Physical Society; Volume: 59; Issue: 14 Linguagem: Inglês
10.1103/physrevlett.59.1605
ISSN1092-0145
AutoresX. A. Shen, P. Bräunlich, Scott C. Jones, Paul J. Kelly,
Tópico(s)Photorefractive and Nonlinear Optics
ResumoThe nonlinear interaction of 532-nm, 100-ps laser pulses with KBr crystals is monitored up to damage by measurement of the \ensuremath{\sigma} component of the self-trapped exciton luminescence versus photon flux. The temperature rise in the interaction volume is obtained from the relation between \ensuremath{\sigma} luminescence and flux with use of the known temperature dependence of the luminous efficiency. The mechanism of energy deposition is four-photon free-carrier generation and free-carrier heating with other small contributions. Damage occurs at a temperature very close to the melting point.
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