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Structural properties and impedance spectroscopy of excimer laser ablated Zr substituted BaTiO 3 thin films

2006; Institute of Physics; Volume: 39; Issue: 8 Linguagem: Inglês

10.1088/0022-3727/39/8/024

1361-6463

A. R. James, Chandra Prakash, G. Prasad,

Semiconductor materials and devices

BaZr0.15Ti0.85O3 thin films were deposited on Pt-coated Si substrates using the pulsed excimer laser ablation technique. X-ray diffraction and atomic force microscope techniques were used to study the structural characteristics of the films. Films with good crystalline quality, with an average grain size of 0.5 µm were obtained, under various oxygen background pressures. Ferroelectric hysteresis loops recorded on the films deposited at 26.66 Pa oxygen pressure showed the best properties. To gain a further understanding of the electrical properties of these films, impedance spectroscopy was used and data acquired at several different temperatures. AC conductivity plots showed the presence of space charge conduction at low frequencies; however, at high frequencies, all the curves merged and expectedly showed an almost dc conduction behaviour. The activation energy obtained from ac conductivity data may be attributed to oxygen vacancy motion.