Effect of a TiO 2 Buffer Layer on the C–V Properties of Pt/PbTiO 3 /TiO 2 /Si Structure
1997; Institute of Physics; Volume: 36; Issue: 9R Linguagem: Inglês
10.1143/jjap.36.5588
ISSN1347-4065
AutoresChulsoo Byun, Yong-Il Kim Yong-Il Kim, Won-Jong Lee Won-Jong Lee, Byong-Whi Lee,
Tópico(s)Electronic and Structural Properties of Oxides
ResumoMetal/ferroelectric/insulator/semiconductor (MFIS) capacitors were prepared by depositing PbTiO 3 and TiO 2 layers on Si(100) wafers at 450 and 550°C using metal organic chemical vapor deposition (MOCVD). The C – V properties of the capacitors depend on the quality of TiO 2 films and TiO 2 /Si interfaces. The TiO 2 film could serve as an effective buffer layer against the Pb diffusion and provide good C – V properties as long as it was deposited at proper substrate temperature with proper thickness.
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