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An 80-Gb/s optoelectronic delayed flip-flop IC using resonant tunneling diodes and uni-traveling-carrier photodiode

2001; Institute of Electrical and Electronics Engineers; Volume: 36; Issue: 2 Linguagem: Inglês

10.1109/4.902769

1558-173X

Kimikazu Sano, Koichi Murata, Taiichi Otsuji, T. Akeyoshi, Nobutaka Shimizu, Eiichi Sano,

Semiconductor Lasers and Optical Devices

This paper describes an 80-Gb/s optoelectronic delayed flip-flop (D-FF) IC that uses resonant tunneling diodes (RTDs) and a uni-traveling-carrier photodiode (UTC-PD). A circuit design that considers the AC currents passing through RTDs and UTC-PD is key to boosting circuit operation speed. A monolithically fabricated IC operated at 80 Gb/s with a low power dissipation of 7.68 mW. The operation speed of 80 Gb/s is the highest among all reported flip-flops. To clarify the maximum operation speed, we analyze the factors limiting circuit speed. Although the bandwidth of UTC-PD limits the maximum speed of operation to 80 Gb/s at present, the circuit has the potential to offer 100-Gb/s-class operation.