Aluminum gettering of iron in silicon as a problem of the ternary phase diagram
2009; American Institute of Physics; Volume: 94; Issue: 6 Linguagem: Inglês
10.1063/1.3080666
ISSN1520-8842
AutoresD. Abdelbarey, V. V. Kveder, W. Schröter, M. Seibt,
Tópico(s)Integrated Circuits and Semiconductor Failure Analysis
ResumoDeep level transient spectroscopy is used to study the segregation of Fe from crystalline Si to an Al:Si liquid at its surface, which is the basic mechanism of aluminum gettering used in silicon photovoltaics. The measured segregation coefficient is smaller than estimates from the binary Fe:Si and Al:Fe phase diagrams. This apparent discrepancy originates from the ternary character of the system where the solubility of Fe in Si in equilibrium with the Al-doped α-FeSi2 has to be taken as a reference. Our data suggest that this solubility exceeds that in the binary Fe:Si system by two orders of magnitude.
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