Photon-assisted oxidation of the GaAs(100) surface using water at 90 K
1995; American Institute of Physics; Volume: 77; Issue: 10 Linguagem: Inglês
10.1063/1.359232
ISSN1520-8850
AutoresE. Ettedgui, Ken T. Park, Jianming Cao, Yongli Gao, M. W. Ruckman,
Tópico(s)Photocathodes and Microchannel Plates
ResumoPhotoelectron spectroscopy is used to study the interaction of H2O with GaAs(100) at 90 K and to assess its use as a photon-assisted oxidizing agent. The condensation of H2O at 90 K produces a thin physisorbed layer on GaAs(100). We found that intense synchrotron radiation causes most of the water to desorb in a sequential manner, without reacting with the substrate. The fraction of water that does not desorb reacts with Ga, giving rise to a Ga oxide. The As present in the substrate does not react with H2O during the process, thereby avoiding the formation of volatile As compounds.
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