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Transparent conducting amorphous Zn–Sn–O films deposited by simultaneous dc sputtering

2004; American Institute of Physics; Volume: 22; Issue: 4 Linguagem: Inglês

10.1116/1.1765658

1520-8559

Toshihiro Moriga, Yukako Hayashi, Kumiko Kondo, Yusuke Nishimura, Kei‐ichiro Murai, Ichiro Nakabayashi, H. Fukumoto, Kikuo Tominaga,

Electrical and Thermal Properties of Materials

The films of ZnO–SnO2 system were deposited on glass substrates by simultaneous dc magnetron sputtering apparatus, in which ZnO and SnO2:Sb (Sb2O5 3 wt % doped) targets faced each other. The substrate temperatures were maintained at 150, 250, and 350 °C, respectively. As an experimental parameter, current ratio δ=IZn/(IZn+ISn), which corresponds to ZnO target current (IZn) divided by the sum of ZnO and SnO2:Sb target currents (IZn+ISn), was adopted. Amorphous transparent films appeared for 0.50⩽δ⩽0.73, which could be correlated to compositions as [Zn]/([Sn]+[Zn])=0.33–0.67 by x-ray fluorescent analysis. At [Zn]/([Sn]+[Zn])=1/2 (δ=0.62), 2/3 (δ=0.73) and all other ratios in as-deposited films, neither crystalline ZnSnO3 nor Zn2SnO4 was obtained. Minimum resistivity of 4–6×10−2 Ω cm was found at δ=0.50, whose composition was approximately SnO2⋅ZnSnO3. Resistivity increased linearly with an increase of the current ratio, until the composition reached Zn2SnO4. The amorphous phase showed a constant Hall mobility of ∼10 cm2/V s and a linear decrease in carrier concentration with increasing Zn content.