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Tuning the exciton g factor in single InAs/InP quantum dots

2009; American Physical Society; Volume: 79; Issue: 4 Linguagem: Inglês

10.1103/physrevb.79.045310

1550-235X

Daniel Kim, Weidong Sheng, Philip J. Poole, Dan Dalacu, J. Lefebvre, J. Lapointe, Michael E. Reimer, G. C. Aers, Robin L. Williams,

Quantum Dots Synthesis And Properties

Photoluminescence data from single self-assembled InAs/InP quantum dots in magnetic fields up to 7 T are presented. Exciton $g$ factors are obtained for dots of varying height, corresponding to ground-state emission energies ranging from 780 to 1100 meV. A monotonic increase in the $g$ factor from $\ensuremath{-}2$ to $+1.2$ is observed as the dot height decreases. The trend is well reproduced by $s{p}^{3}$ tight-binding calculations, which show that the hole $g$ factor is sensitive to confinement effects through orbital angular-momentum mixing between the light-hole and heavy-hole valence bands. We demonstrate tunability of the exciton $g$ factor by manipulating the quantum dot dimensions using pyramidal InP nanotemplates.