GaInAsP/InP lateral-current-injection distributed feedback laser with a-Si surface grating
2011; Optica Publishing Group; Volume: 19; Issue: 3 Linguagem: Inglês
10.1364/oe.19.001884
ISSN1094-4087
AutoresTakahiko Shindo, Tadashi Okumura, Hitomi Ito, Takayuki Koguchi, Daisuke Takahashi, Yuki Atsumi, JoonHyun Kang, Ryo Osabe, Tomohiro Amemiya, Nobuhiko Nishiyama, Shigehisa Arai,
Tópico(s)Semiconductor Lasers and Optical Devices
ResumoWe fabricated a novel lateral-current-injection-type distributed feedback (DFB) laser with amorphous-Si (a-Si) surface grating as a step to realize membrane lasers. This laser consists of a thin GaInAsP core layer grown on a semi-insulating InP substrate and a 30-nm-thick a-Si surface layer for DFB grating. Under a room-temperature continuous-wave condition, a low threshold current of 7.0 mA and high efficiency of 43% from the front facet were obtained for a 2.0-μm stripe width and 300-μm cavity length. A small-signal modulation bandwidth of 4.8 GHz was obtained at a bias current of 30 mA.
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