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Thermal capture of electrons and holes at zinc centers in silicon

1973; Elsevier BV; Volume: 16; Issue: 10 Linguagem: Inglês

10.1016/0038-1101(73)90140-8

1879-2405

J. M. Herman, C. T. Sah,

Advancements in Semiconductor Devices and Circuit Design

The thermal capture rates of electrons and holes at zinc centers in silicon are obtained in reversed biased N+P and P+N diodes from junction capacitance transients due to capture of photogenerated and injected carriers. The electric field dependence of the thermal capture rates of holes at singly ionized zinc centers is E−1·1, while that at doubly ionized zinc centers is exp(−E/E0). The temperature dependence of the thermal capture rate of holes at doubly ionized zinc centers is small. The thermal capture rate of electrons at neutral zinc centers is 2·0×10−9cm3/sec with very little field dependences, while that at singly ionized zinc centers is 5·0×10−11cm3/sec with very little field and temperature dependence below 170°K. Auger-impact emission rate of electrons trapped at doubly ionized zinc centers by electrons is 3·5×10−10cm3/sec with very little field and temperature dependence below 170°K.