Growth of gallium nitride by hydride vapor-phase epitaxy
1997; Elsevier BV; Volume: 178; Issue: 1-2 Linguagem: Inglês
10.1016/s0022-0248(97)00075-4
ISSN1873-5002
AutoresR. J. Molnar, Werner Götz, Lucia Romano, N. M. Johnson,
Tópico(s)Ga2O3 and related materials
ResumoThis paper reviews the growth of GaN thick films by hydride vapor-phase epitaxy (HVPE). Emphasis is placed on recent developments, including the growth of nondegenerate material, characterization of film properties and suitability of such films for epitaxial device overgrowths. Films up to 74 μm thick have been deposited on sapphire substrates with no evidence of thermally induced cracking and a room-temperature Hall mobility of 880 cm2/V s at 293 K. Dislocation densities have been found to decrease with film thickness to 5 × 107 cm−2 for a 40 μm thick sample. Epitaxial films overgrown on these HVPE GaN buffers, both by organometallic vapor-phase epitaxy and molecular-beam epitaxy, replicate the defect structure of the HVPE buffer, resulting in dislocation densities no higher than the HVPE buffer and lower than are typically observed for nitride epilayers grown on other substrate materials. Efforts towards film/substrate separation will be discussed.
Referência(s)