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Growth of Ga$_{\bm 2}$O $_{\bm 3}$ Nanowires and the Fabrication of Solar-Blind Photodetector

2011; Institute of Electrical and Electronics Engineers; Volume: 10; Issue: 5 Linguagem: Inglês

10.1109/tnano.2011.2104366

1941-0085

W. Y. Weng, Ting‐Jen Hsueh, S.J. Chang, G. J. Huang, Shang-Chao Hung,

Gas Sensing Nanomaterials and Sensors

The authors report the growth of nanowires by heating the GaN/sapphire template. It was found that density, average length, and average diameter of the nanowires all increased as we increased the grown temperature. It was also found that β-Ga 2 O 3 nanowires with good crystal quality could be achieved only at high temperatures (i.e., 1050 and 1100 °C). Solar-blind β-Ga 2 O 3 nanowire photodetector was also fabricated by depositing interdigitated contact electrodes. With an incident light wavelength of 255 nm and an applied bias of 5 V, it was found that measured responsivity of the photodetector was 3.72×10 -1 mA/W.