MWPACVD diamond homoepitaxial growth: role of the plasma and the substrate parameters
1995; Elsevier BV; Volume: 4; Issue: 4 Linguagem: Inglês
10.1016/0925-9635(94)05316-2
ISSN1879-0062
AutoresCorinne Findeling-Dufour, Alexis Vignes, A. Gicquel,
Tópico(s)Advanced materials and composites
ResumoHomoepitaxial diamond layers were grown in a microwave plasma-assisted chemical vapour deposition (MWPACVD) reactor on {100} and {110} diamond single crystals. The effects of the operating conditions and of the substrate misorientation from a low index plane on the quality of the epi layers and on the growth rates are presented. Optical and scanning electron microscopy demonstrated that, for the {100} substrates, the morphology of the layers strongly depends on the substrate temperature and on the microwave power density. For the {110} substrates, the morphology depends on the methane percentage and on the rate of cooling after deposition. Raman spectroscopy shows, for the {100} substrates, an absence in the epi layers of non-diamond phases, and for the {110} substrates the presence of non-diamond phases depends on the methane percentage.
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