Investigation on the diffusion barrier properties of sputtered Mo∕W–N thin films in Cu interconnects
2007; American Institute of Physics; Volume: 91; Issue: 16 Linguagem: Inglês
10.1063/1.2800382
ISSN1520-8842
AutoresProdyut Majumder, Christos G. Takoudis,
Tópico(s)Semiconductor materials and interfaces
ResumoMo ∕ W – N bilayer thin film structures deposited on Si using sputtering have been studied as a copper diffusion barrier. The thermal stability of the barrier structure after annealing Cu∕Mo∕W–N∕⟨Si⟩ samples in N2 for 5min is studied using x-ray diffraction (XRD), scanning electron microscopy/energy dispersive spectroscopy, and four point probe measurements. The failure of the barrier structure is indicated by the abrupt increase in sheet resistance value and the formation of Cu3Si phase as probed by XRD. Our results suggest that the Mo (5nm)∕W–N (5nm) barrier is stable and can prevent the formation of Cu3Si at least up to 775°C.
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