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Annealing temperature effect on the performance of nonvolatile HfO2 Si-oxide-nitride-oxide-silicon-type flash memory

2006; American Institute of Physics; Volume: 24; Issue: 3 Linguagem: Inglês

10.1116/1.2174021

1520-8559

Yu-Hsien Lin, Chao‐Hsin Chien, Chun‐Yen Chang, Tan‐Fu Lei,

Advanced Memory and Neural Computing

In this article, we demonstrate the effect of the postdeposition annealing for the HfO2 trapping layer on the performance of the Si-oxide-nitride-oxide-silicon-type flash memories. It was found that the memory window becomes larger while the retention and endurance characteristics get worse as the annealing temperature increases. This was ascribed to the larger amount and the shallower energy levels of the crystallization-induced traps as compared to the traps presented in the as-fabricated HfO2 film. Finally, in the aspect of disturbances, we show only insignificant read, drain, and gate disturbances presented in the three samples in the normal operation.