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Nitrogen ion beam induced recrystallization of AlNx films

1988; Elsevier BV; Volume: 33; Issue: 1-4 Linguagem: Inglês

10.1016/0168-583x(88)90661-1

1872-9584

Kobayashi Kenzo, Namba Susumu, Takanobu Fujihana, Yisheng Dai, Iwaki Masaya,

Semiconductor materials and devices

A study has been made of the change in crystallinity of AlNx (x < 1) films due to N-implantation by means of X-ray diffraction (XRD). The 750 Å AlNx films were deposited on Si (111), glassy carbon and commercial glass by an activated reactive evaporation (ARE) method in a nitrogen atmosphere. The 40 and 80 keV N+- implantations were carried out near room temperature with doses ranging from 5 × 1016 to 5 × 1017 N+-ions/cm2 at 1 × 10−6 Torr. The XRD patterns revealed that the as-deposited AlNx, film on Si has the (101) orientation of AlN, and N-implantation enhances a (002) orientation of AlN instead of the AlN (101) orientation. The AlN component with the (002) orientation grows in films deposited on Si, glassy carbon and commercial glass, depending on the dose and accelerating energy. Excess nitrogen doses prevent the AlN component with the (002) orientation from growing due to radiation damage and/or nitrogen bubbles. It is concluded that N-ion implantation in AlNx films at proper conditions results in the formation of c-axis oriented AlN films.