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Spectroscopic studies of the mechanism for hydrogen-induced exfoliation of InP

2005; American Physical Society; Volume: 72; Issue: 8 Linguagem: Inglês

10.1103/physrevb.72.085219

1550-235X

Anna Fontcuberta i Morral, James M. Zahler, M. J. Griggs, Harry A. Atwater, Yves J. Chabal,

Thin-Film Transistor Technologies

The motion and bonding configurations of hydrogen in InP are studied after proton implantation and subsequent annealing, using Fourier transform infrared (FTIR) spectroscopy. It is demonstrated that, as implanted, hydrogen is distributed predominantly in isolated pointlike configurations with a smaller concentration of extended defects with uncompensated dangling bonds. During annealing, the bonded hydrogen is released from point defects and is recaptured at the peak of the distribution by free internal surfaces in di-hydride configurations. At higher temperatures, immediately preceding exfoliation, rearrangement processes lead to the formation of hydrogen clusters and molecules. Reported results demonstrate that the exfoliation dynamics of hydrogen in InP and Si are markedly different, due to the higher mobility of hydrogen in InP and different implant-defect characteristics, leading to fundamental differences in the chemical mechanism for exfoliation.