Simplified closed-form trap-assisted tunneling model applied to nitrided oxide dielectric capacitors
1992; American Institute of Physics; Volume: 72; Issue: 12 Linguagem: Inglês
10.1063/1.351923
ISSN1520-8850
AutoresS. Fleischer, P. T. Lai, Yingchun Cheng,
Tópico(s)Metal and Thin Film Mechanics
ResumoConduction has been studied in ultrathin nitrided oxide, re-oxidized nitrided oxide, and nitrogen-annealed nitrided oxide film capacitors in which the nitridation step was performed by a low-partial-pressure nitridation technique. Results indicate that, as well as some degree of barrier lowering due to the build-up of nitrogen at the injecting interface, a trap-assisted mechanism could be responsible for the enhanced conduction exhibited by the nitrided oxide devices. A simplified closed-form trap-assisted tunneling model is employed that produces a fit to the data with a trap depth of 2.1 eV. The difference between this trap model and a model requiring numerical integration was negligibly small (∼2%).
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