High‐quality AlN epitaxial films on (0001)‐faced sapphire and 6H‐SiC substrate
2003; Wiley; Issue: 7 Linguagem: Inglês
10.1002/pssc.200303392
ISSN1862-6351
AutoresT. Shibata, Kei Asai, S. Sumiya, M. Mouri, Mitsuhiro Tanaka, Osamu Oda, Hiroyuki Katsukawa, Hideto Miyake, K. Hiramatsu,
Tópico(s)Acoustic Wave Resonator Technologies
Resumophysica status solidi (c)Volume 0, Issue 7 p. 2023-2026 Original Paper High-quality AlN epitaxial films on (0001)-faced sapphire and 6H-SiC substrate T. Shibata, Corresponding Author T. Shibata sibata@ngk.co.jp NGK INSULATORS, LTD., 2-56 Suda-cho, Mizuho, Nagoya 467-8530, Japan Department of Electrical and Electronic Engineering, Faculty of Engineering, Mie University, 1515 Kamihama, Tsu, Mie 514-8507, JapanPhone: +81 52 872 7757, Fax: +81 52 872 7909Search for more papers by this authorK. Asai, K. Asai NGK INSULATORS, LTD., 2-56 Suda-cho, Mizuho, Nagoya 467-8530, JapanSearch for more papers by this authorS. Sumiya, S. Sumiya NGK INSULATORS, LTD., 2-56 Suda-cho, Mizuho, Nagoya 467-8530, JapanSearch for more papers by this authorM. Mouri, M. Mouri NGK INSULATORS, LTD., 2-56 Suda-cho, Mizuho, Nagoya 467-8530, JapanSearch for more papers by this authorM. Tanaka, M. Tanaka NGK INSULATORS, LTD., 2-56 Suda-cho, Mizuho, Nagoya 467-8530, JapanSearch for more papers by this authorO. Oda, O. Oda NGK INSULATORS, LTD., 2-56 Suda-cho, Mizuho, Nagoya 467-8530, JapanSearch for more papers by this authorH. Katsukawa, H. Katsukawa NGK INSULATORS, LTD., 2-56 Suda-cho, Mizuho, Nagoya 467-8530, JapanSearch for more papers by this authorH. Miyake, H. Miyake Department of Electrical and Electronic Engineering, Faculty of Engineering, Mie University, 1515 Kamihama, Tsu, Mie 514-8507, JapanSearch for more papers by this authorK. Hiramatsu, K. Hiramatsu Department of Electrical and Electronic Engineering, Faculty of Engineering, Mie University, 1515 Kamihama, Tsu, Mie 514-8507, JapanSearch for more papers by this author T. Shibata, Corresponding Author T. Shibata sibata@ngk.co.jp NGK INSULATORS, LTD., 2-56 Suda-cho, Mizuho, Nagoya 467-8530, Japan Department of Electrical and Electronic Engineering, Faculty of Engineering, Mie University, 1515 Kamihama, Tsu, Mie 514-8507, JapanPhone: +81 52 872 7757, Fax: +81 52 872 7909Search for more papers by this authorK. Asai, K. Asai NGK INSULATORS, LTD., 2-56 Suda-cho, Mizuho, Nagoya 467-8530, JapanSearch for more papers by this authorS. Sumiya, S. Sumiya NGK INSULATORS, LTD., 2-56 Suda-cho, Mizuho, Nagoya 467-8530, JapanSearch for more papers by this authorM. Mouri, M. Mouri NGK INSULATORS, LTD., 2-56 Suda-cho, Mizuho, Nagoya 467-8530, JapanSearch for more papers by this authorM. Tanaka, M. Tanaka NGK INSULATORS, LTD., 2-56 Suda-cho, Mizuho, Nagoya 467-8530, JapanSearch for more papers by this authorO. Oda, O. Oda NGK INSULATORS, LTD., 2-56 Suda-cho, Mizuho, Nagoya 467-8530, JapanSearch for more papers by this authorH. Katsukawa, H. Katsukawa NGK INSULATORS, LTD., 2-56 Suda-cho, Mizuho, Nagoya 467-8530, JapanSearch for more papers by this authorH. Miyake, H. Miyake Department of Electrical and Electronic Engineering, Faculty of Engineering, Mie University, 1515 Kamihama, Tsu, Mie 514-8507, JapanSearch for more papers by this authorK. Hiramatsu, K. Hiramatsu Department of Electrical and Electronic Engineering, Faculty of Engineering, Mie University, 1515 Kamihama, Tsu, Mie 514-8507, JapanSearch for more papers by this author First published: 24 November 2003 https://doi.org/10.1002/pssc.200303392Citations: 45AboutPDF ToolsRequest permissionExport citationAdd to favoritesTrack citation ShareShare Give accessShare full text accessShare full-text accessPlease review our Terms and Conditions of Use and check box below to share full-text version of article.I have read and accept the Wiley Online Library Terms and Conditions of UseShareable LinkUse the link below to share a full-text version of this article with your friends and colleagues. Learn more.Copy URL Share a linkShare onFacebookTwitterLinked InRedditWechat Abstract This paper presents crystal qualities of high-quality AlN epitaxial films on (0001)-faced sapphire and6H-SiC substrates. The AlN epitaxial films are grown using a low-pressure metal organic vapor phase epitaxy (LP-MOVPE) method. 0.5–1 μm-thick AlN films without any cracks are realized on both substrates. Both of AlN films are found to have similar crystal qualities in spite of large difference in in-plane lattice mismatch between AlN and each substrate. The AlN films have an atomically flat surface with clear atomic steps. Results of X-ray rocking curve (XRC) measurement indicate that both of the AlN films have small tilted mosaicity, however relatively large twisted mosaicity. Dislocation density of the AlN films in its surface region is approximately as low as 1 × 1010 cm−2 and most of dislocations consist of edge-type dislocations. (© 2003 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim) Citing Literature Volume0, Issue7Special Issue: 5th International Conference on Nitride Semiconductors (ICNS-5)December 2003Pages 2023-2026 RelatedInformation
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