Deposition and properties of MoS2 thin films grown by pulsed laser evaporation
1988; Elsevier BV; Volume: 36; Issue: 1-2 Linguagem: Inglês
10.1016/0257-8972(88)90163-6
ISSN1879-3347
AutoresM.S. Donley, P. T. Murray, S. A. Barber, T. W. Haas,
Tópico(s)Chalcogenide Semiconductor Thin Films
ResumoThin films of MoS2 have been grown on stainless steel substrates by pulsed laser evaporation. Analysis by X-ray photoelectron spectroscopy indicates that films grown at substrate temperatures up to 300 °C have the same stoichiometry as bulk MoS2; films grown at 450 °C are sulfur rich. The laser-deposited films have a granular structure and exhibit none of the dendritic structures typically observed in sputter-deposited films. Analysis of the films by X-ray diffraction indicates some preferred orientation. The coefficients of friction were measured in laboratory air and ranged from 0.09 to 0.25; the majority of values were between 0.16 and 0.20. These friction coefficients are in the appropriate range for a solid lubricant and indicate that pulsed laser evaporation is clearly a feasible technique for growing lubricious MoS2 films.
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