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Ti-Si-N Films with a High Content of Si

2007; Wiley; Volume: 4; Issue: S1 Linguagem: Inglês

10.1002/ppap.200731408

1612-8869

J. Musil, P. Zeman, Pavel Dohnal,

Advanced Surface Polishing Techniques

Plasma Processes and PolymersVolume 4, Issue S1 p. S574-S578 Full Paper Ti-Si-N Films with a High Content of Si Jindrich Musil, Corresponding Author Jindrich Musil musil@kfy.zcu.cz Department of Physics, University of West Bohemia, Univerzitní 22, 306 14 Plzeň, Czech RepublicDepartment of Physics, University of West Bohemia, Univerzitní 22, 306 14 Plzeň, Czech RepublicSearch for more papers by this authorPetr Zeman, Petr Zeman Department of Physics, University of West Bohemia, Univerzitní 22, 306 14 Plzeň, Czech RepublicSearch for more papers by this authorPavel Dohnal, Pavel Dohnal Department of Physics, University of West Bohemia, Univerzitní 22, 306 14 Plzeň, Czech RepublicSearch for more papers by this author Jindrich Musil, Corresponding Author Jindrich Musil musil@kfy.zcu.cz Department of Physics, University of West Bohemia, Univerzitní 22, 306 14 Plzeň, Czech RepublicDepartment of Physics, University of West Bohemia, Univerzitní 22, 306 14 Plzeň, Czech RepublicSearch for more papers by this authorPetr Zeman, Petr Zeman Department of Physics, University of West Bohemia, Univerzitní 22, 306 14 Plzeň, Czech RepublicSearch for more papers by this authorPavel Dohnal, Pavel Dohnal Department of Physics, University of West Bohemia, Univerzitní 22, 306 14 Plzeň, Czech RepublicSearch for more papers by this author First published: 24 May 2007 https://doi.org/10.1002/ppap.200731408Citations: 17Read the full textAboutPDF ToolsRequest permissionExport citationAdd to favoritesTrack citation ShareShare Give accessShare full text accessShare full-text accessPlease review our Terms and Conditions of Use and check box below to share full-text version of article.I have read and accept the Wiley Online Library Terms and Conditions of UseShareable LinkUse the link below to share a full-text version of this article with your friends and colleagues. Learn more.Copy URL Share a linkShare onFacebookTwitterLinked InRedditWechat Abstract The article reports on mechanical properties and oxidation of amorphous Ti-Si-N films with a high (>20 at.-%) content of Si reactively sputtered using a closed magnetic field dual magnetron sputtering system operating in AC pulse mode. The films were sputtered from compound targets on Si(100), 15 330 steel and Al2O3 substrates. It was found that (1) the Ti-Si-N films with a high (≥50 at.-%) content of N are X-ray amorphous and exhibit (i) relatively high hardness H ranging from ∼20 to 27 GPa and (ii) high oxidation temperature achieving ∼1 480 °C for the a-Ti-Si-N film on the Al2O3 (sapphire) substrate, and (2) Young's modulus of the films is strongly affected by mechanical properties of the substrate. Citing Literature Volume4, IssueS1Supplement: Supplement: Tenth International Conference on Plasma Surface Engineering (PSE2006)April 2007Pages S574-S578 RelatedInformation