Magnetic tunnel junctions using B2-ordered Co2MnAl Heusler alloy epitaxial electrode
2006; American Institute of Physics; Volume: 88; Issue: 2 Linguagem: Inglês
10.1063/1.2162867
ISSN1520-8842
AutoresYuya Sakuraba, J. Nakata, Mikihiko Oogane, Yasuo Ando, H. Katô, Akimasa Sakuma, T. Miyazaki, Hitoshi Kubota,
Tópico(s)2D Materials and Applications
ResumoMagnetic tunnel junctions were fabricated with epitaxially grown Co2MnAl bottom electrodes combined with an Al–O tunnel barrier using a magnetron sputtering system. The epitaxial Co2MnAl electrode had very low surface roughness of 0.2nm and a highly ordered B2 structure. Magnetic tunnel junctions (MTJs) with a stacking structure of epitaxial-Co2MnAl∕Al–O∕CoFe∕IrMn exhibited large tunnel magnetoresistance (TMR) ratios of 65% at room temperature and 83% at 10K. The TMR ratios were larger than those of a MTJ with a Co2MnAl polycrystalline electrode.
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