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AlGaN/GaN Heterostructure Metal-Insulator-Semiconductor High-Electron-Mobility Transistors with Si 3 N 4 Gate Insulator

2003; Institute of Physics; Volume: 42; Issue: Part 1, No. 4B Linguagem: Inglês

10.1143/jjap.42.2278

1347-4065

M. Ochiai, M. Akita, Yutaka Ohno, Shigeru Kishimoto, Kouichi Maezawa, Takashi Mizutani,

Silicon Carbide Semiconductor Technologies

AlGaN/GaN metal-insulator-semiconductor high-electron-mobility transistors (MIS-HEMTs) using Si3N4 film as a gate insulator have been successfully fabricated. The gate leakage current decreased by about three orders of magnitude compared to that of the conventional AlGaN/GaN HEMTs without the Si3N4 gate insulator. The low-frequency noise of the MIS-HEMTs was smaller than that of the conventional HEMTs. Current collapse has also been suppressed in the MIS-HEMTs.