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GaAs Light Emitting Diodes Fabricated on SiO 2 /Si Wafers

1983; Institute of Physics; Volume: 22; Issue: 7A Linguagem: Inglês

10.1143/jjap.22.l450

1347-4065

Yukinobu Shinoda, Takashi Nishioka, Yoshiro Ohmachi,

Semiconductor materials and devices

GaAs LEDs have been successfully realized on thermally oxidized Si wafers. Ge layers were recrystallized on tungsten coated SiO 2 /Si wafers and used as substrates for GaAs epitaxial growth. Light emission of around 9000 Å was observed at room temperature.