Portal de Periódicos da CAPES

Dual-Gate Field-Effect Transistor Hydrogen Gas Sensor with Thermal Compensation

2010; Institute of Physics; Volume: 49; Issue: 2R Linguagem: Inglês

10.1143/jjap.49.024206

1347-4065

Keiji Tsukada, Masatoshi Kariya, Tomiharu Yamaguchi, Toshihiko Kiwa, Hironobu Yamada, Tsuneyoshi Maehara, Tadayoshi Yamamoto, Shinsuke Kunitsugu,

Electrochemical Analysis and Applications

We developed a dual-gate field-effect transistor (FET) hydrogen gas sensor for application to hydrogen vehicles. The dual-gate FET hydrogen sensor was integrated with a Pt-gate FET to detect hydrogen and a Ti-gate FET as the reference sensor in the same Si chip. The Ti-FET had the same structure as the Pt-FET except for the gate metal. The Pt-FET showed a good response to hydrogen gas above 10 ppm in air, while the Ti-FET did not show any response to hydrogen gas. The differential output voltage between the Pt-FET and the Ti-FET was stable in the temperature range from room temperature to 80 °C because of the same temperature dependence of the current–voltage ( I – V ) characteristics. In addition, the temperature of the integrated hydrogen sensor was controlled by an integrated system consisting of a heater and a thermometer at any given temperature under severe weather conditions.